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NXPSC04650BJ Datasheet

NXPSC04650BJ Cover
DatasheetNXPSC04650BJ
File Size277.4 KB
Total Pages10
ManufacturerWeEn Semiconductors
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts NXPSC04650BJ
Description DIODE SCHOTTKY 650V 4A D2PAK

NXPSC04650BJ - WeEn Semiconductors

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NXPSC04650BJ

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

4A

Voltage - Forward (Vf) (Max) @ If

1.7V @ 4A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

170µA @ 650V

Capacitance @ Vr, F

130pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Operating Temperature - Junction

175°C (Max)