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PH3855L Datasheet

PH3855L,115 Cover
DatasheetPH3855L,115
File Size184.86 KB
Total Pages12
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PH3855L,115
Description MOSFET N-CH 55V 24A LFPAK

PH3855L,115 - NXP

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PH3855L,115 PH3855L,115 NXP MOSFET N-CH 55V 24A LFPAK 278

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

36mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11.7nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

765pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669