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PHB32N06LT Datasheet

PHB32N06LT,118 Cover
DatasheetPHB32N06LT,118
File Size851.58 KB
Total Pages11
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHB32N06LT,118
Description MOSFET N-CH 60V 34A D2PAK

PHB32N06LT,118 - Nexperia

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URL Link

PHB32N06LT,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 5V

Rds On (Max) @ Id, Vgs

37mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1280pF @ 25V

FET Feature

-

Power Dissipation (Max)

97W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB