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PHD20N06T Datasheet

PHD20N06T,118 Cover
DatasheetPHD20N06T,118
File Size855.13 KB
Total Pages12
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHD20N06T,118
Description MOSFET N-CH 55V 18A DPAK

PHD20N06T,118 - Nexperia

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URL Link

PHD20N06T,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

77mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

422pF @ 25V

FET Feature

-

Power Dissipation (Max)

51W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63