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| Datasheet | PHD34NQ10T,118 |
| File Size | 285.25 KB |
| Total Pages | 13 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHD34NQ10T,118 |
| Description | MOSFET N-CH 100V 35A DPAK |
PHD34NQ10T,118 - NXP
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PHD34NQ10T,118 | NXP | MOSFET N-CH 100V 35A DPAK | 247 More on Order |
URL Link
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1704pF @ 25V FET Feature - Power Dissipation (Max) 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |