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PHD38N02LT Datasheet

PHD38N02LT,118 Cover
DatasheetPHD38N02LT,118
File Size201.27 KB
Total Pages13
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHD38N02LT,118
Description MOSFET N-CH 20V 44.7A DPAK

PHD38N02LT,118 - Nexperia

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URL Link

PHD38N02LT,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

44.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

16mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.1nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 20V

FET Feature

-

Power Dissipation (Max)

57.6W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63