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PHK18NQ03LT Datasheet

PHK18NQ03LT,518 Cover
DatasheetPHK18NQ03LT,518
File Size152.25 KB
Total Pages11
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHK18NQ03LT,518
Description MOSFET N-CH 30V 20.3A 8-SOIC

PHK18NQ03LT,518 - Nexperia

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URL Link

PHK18NQ03LT,518

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

10.6nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1380pF @ 12V

FET Feature

-

Power Dissipation (Max)

6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)