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| Datasheet | PHN203,518 |
| File Size | 762.04 KB |
| Total Pages | 13 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHN203,518 |
| Description | MOSFET 2N-CH 30V 6.3A SOT96-1 |
PHN203,518 - Nexperia
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PHN203,518 | Nexperia | MOSFET 2N-CH 30V 6.3A SOT96-1 | 257 More on Order |
URL Link
www.zouser.com/datasheet/PHN203,518
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.3A Rds On (Max) @ Id, Vgs 30mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 560pF @ 20V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |