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PHT4NQ10T Datasheet

PHT4NQ10T,135 Cover
DatasheetPHT4NQ10T,135
File Size389.31 KB
Total Pages13
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHT4NQ10T,135
Description MOSFET N-CH 100V 3.5A SOT223

PHT4NQ10T,135 - Nexperia

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URL Link

PHT4NQ10T,135

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 1.75A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Power Dissipation (Max)

6.9W (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-73

Package / Case

TO-261-4, TO-261AA