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| Datasheet | PHW80NQ10T,127 |
| File Size | 96.65 KB |
| Total Pages | 7 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHW80NQ10T,127 |
| Description | MOSFET N-CH 100V 80A SOT429 |
PHW80NQ10T,127 - NXP
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URL Link
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 109nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4720pF @ 25V FET Feature - Power Dissipation (Max) 263W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |