Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | PMCM650VNE/S500Z |
| File Size | 735.77 KB |
| Total Pages | 15 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | PMCM650VNE/S500Z, PMCM650VNEZ |
| Description | MOSFET N-CH 12V 8.4A 6WLCSP, MOSFET N-CH 12V 4WLCSP |
PMCM650VNE/S500Z - Nexperia
The Products You May Be Interested In
 |
PMCM650VNE/S500Z | Nexperia | MOSFET N-CH 12V 8.4A 6WLCSP | 315 More on Order |
 |
PMCM650VNEZ | Nexperia | MOSFET N-CH 12V 4WLCSP | 483 More on Order |
URL Link
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 8.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 6V FET Feature - Power Dissipation (Max) 12.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WLCSP (1.48x.98) Package / Case 6-XFBGA, WLCSP |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 6V FET Feature - Power Dissipation (Max) 556mW (Ta), 12.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WLCSP (1.48x.98) Package / Case 6-XFBGA, WLCSP |