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| Datasheet | PMF63UN,115 |
| File Size | 1,002.8 KB |
| Total Pages | 16 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMF63UN,115 |
| Description | MOSFET N-CH 20V 1.8A SOT323 |
PMF63UN,115 - NXP
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PMF63UN,115 | NXP | MOSFET N-CH 20V 1.8A SOT323 | 588 More on Order |
URL Link
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Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 74mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 185pF @ 10V FET Feature - Power Dissipation (Max) 275mW (Ta), 1.785W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323-3 Package / Case SC-70, SOT-323 |