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PMFPB6545UP Datasheet

PMFPB6545UP,115 Cover
DatasheetPMFPB6545UP,115
File Size605.6 KB
Total Pages19
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMFPB6545UP,115
Description MOSFET P-CH 20V 3.5A SOT1118

PMFPB6545UP,115 - NXP

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PMFPB6545UP,115 PMFPB6545UP,115 NXP MOSFET P-CH 20V 3.5A SOT1118 514

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URL Link

Manufacturer

NXP USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

70mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

520mW (Ta), 8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN2020-6

Package / Case

6-UDFN Exposed Pad