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PMN50XP Datasheet

PMN50XP,165 Cover
DatasheetPMN50XP,165
File Size266.56 KB
Total Pages12
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMN50XP,165
Description MOSFET P-CH 20V 4.8A 6TSOP

PMN50XP,165 - NXP

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PMN50XP,165 PMN50XP,165 NXP MOSFET P-CH 20V 4.8A 6TSOP 310

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

60mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1020pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457