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PMV170UN Datasheet

PMV170UN,215 Cover
DatasheetPMV170UN,215
File Size198.66 KB
Total Pages14
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMV170UN,215
Description MOSFET N-CH 20V 1A TO-236AB

PMV170UN,215 - NXP

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PMV170UN,215 PMV170UN,215 NXP MOSFET N-CH 20V 1A TO-236AB 461

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URL Link

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

165mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.65nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

83pF @ 10V

FET Feature

-

Power Dissipation (Max)

325mW (Ta), 1.14W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB (SOT23)

Package / Case

TO-236-3, SC-59, SOT-23-3