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PMV280ENEAR Datasheet

PMV280ENEAR Cover
DatasheetPMV280ENEAR
File Size726.21 KB
Total Pages16
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMV280ENEAR
Description MOSFET N-CH 100V 1.1A TO236AB

PMV280ENEAR - Nexperia

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PMV280ENEAR PMV280ENEAR Nexperia MOSFET N-CH 100V 1.1A TO236AB 4147

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URL Link

PMV280ENEAR

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

385mOhm @ 1.1A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 50V

FET Feature

-

Power Dissipation (Max)

580mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3