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| Datasheet | PMV30UN2VL |
| File Size | 726.72 KB |
| Total Pages | 15 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | PMV30UN2VL, PMV30UN2R |
| Description | MOSFET N-CH 20V 5.4A TO236AB, MOSFET N-CH 20V SOT23 |
PMV30UN2VL - Nexperia
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 32mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V FET Feature - Power Dissipation (Max) 490mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 32mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V FET Feature - Power Dissipation (Max) 490mW (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |