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PMV50UPEVL Datasheet

PMV50UPEVL Cover
DatasheetPMV50UPEVL
File Size721.99 KB
Total Pages14
ManufacturerNexperia
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts PMV50UPEVL, PMV50UPE,215
Description MOSFET P-CH 20V 3.7A TO236AB, MOSFET P-CH 20V 3.2A TO-236AB

PMV50UPEVL - Nexperia

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PMV50UPEVL PMV50UPEVL Nexperia MOSFET P-CH 20V 3.7A TO236AB 430

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PMV50UPE,215 PMV50UPE,215 Nexperia MOSFET P-CH 20V 3.2A TO-236AB 4059

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URL Link

PMV50UPEVL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

66mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.7nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

24pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

PMV50UPE,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

66mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.7nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

24pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3