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PMV65UN Datasheet

PMV65UN,215 Cover
DatasheetPMV65UN,215
File Size328.77 KB
Total Pages15
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PMV65UN,215
Description MOSFET N-CH 20V 2A SOT-23

PMV65UN,215 - NXP

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PMV65UN,215 PMV65UN,215 NXP MOSFET N-CH 20V 2A SOT-23 537

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URL Link

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

76mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.9nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

183pF @ 10V

FET Feature

-

Power Dissipation (Max)

310mW (Ta), 2.17W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB (SOT23)

Package / Case

TO-236-3, SC-59, SOT-23-3