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| Datasheet | PMWD19UN,518 |
| File Size | 244.37 KB |
| Total Pages | 12 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMWD19UN,518 |
| Description | MOSFET 2N-CH 30V 5.6A 8TSSOP |
PMWD19UN,518 - NXP
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PMWD19UN,518 | NXP | MOSFET 2N-CH 30V 5.6A 8TSSOP | 365 More on Order |
URL Link
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.6A Rds On (Max) @ Id, Vgs 23mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1478pF @ 10V Power - Max 2.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |