Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | PMZB600UNELYL |
| File Size | 721.23 KB |
| Total Pages | 15 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PMZB600UNELYL |
| Description | MOSFET N-CH 20V 600MA 3DFN1006B |
PMZB600UNELYL - Nexperia
The Products You May Be Interested In
 |
PMZB600UNELYL | Nexperia | MOSFET N-CH 20V 600MA 3DFN1006B | 491 More on Order |
URL Link
www.zouser.com/datasheet/PMZB600UNELYL
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 620mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1006B-3 Package / Case 3-XFDFN |