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PN3563_D75Z Datasheet

PN3563_D75Z Cover
DatasheetPN3563_D75Z
File Size528.99 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts PN3563_D75Z, PN3563_D74Z, PN3563_D26Z, PN3563
Description RF TRANS NPN 15V 1.5GHZ TO92-3, RF TRANS NPN 15V 1.5GHZ TO92-3, RF TRANS NPN 15V 1.5GHZ TO92-3, RF TRANS NPN 15V 1.5GHZ TO92-3

PN3563_D75Z - ON Semiconductor

PN3563_D75Z Datasheet Page 1
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URL Link

PN3563_D75Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.5GHz

Noise Figure (dB Typ @ f)

-

Gain

14dB ~ 26dB

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 8mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

PN3563_D74Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.5GHz

Noise Figure (dB Typ @ f)

-

Gain

14dB ~ 26dB

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 8mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

PN3563_D26Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.5GHz

Noise Figure (dB Typ @ f)

-

Gain

14dB ~ 26dB

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 8mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

PN3563

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.5GHz

Noise Figure (dB Typ @ f)

-

Gain

14dB ~ 26dB

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 8mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3