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PSMN011-100YSFX Datasheet

PSMN011-100YSFX Cover
DatasheetPSMN011-100YSFX
File Size317.21 KB
Total Pages14
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PSMN011-100YSFX
Description MOS DISCRETES

PSMN011-100YSFX - Nexperia

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URL Link

PSMN011-100YSFX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

79.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

10.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

34.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2.258nF @ 50V

FET Feature

-

Power Dissipation (Max)

152W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669