Datasheet | PSMN1R2-25YLDX |
File Size | 729.72 KB |
Total Pages | 14 |
Manufacturer | Nexperia |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | PSMN1R2-25YLDX |
Description | PSMN1R2-25YLD/LFPAK/REEL 7 Q1 |
PSMN1R2-25YLDX - Nexperia
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URL Link
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Nexperia Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 60.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4327pF @ 12V FET Feature Schottky Diode (Body) Power Dissipation (Max) 172W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |