Datasheet | PSMN3R5-80ES,127 |
File Size | 818.1 KB |
Total Pages | 15 |
Manufacturer | Nexperia |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | PSMN3R5-80ES,127 |
Description | MOSFET N-CH 80V 120A I2PAK |
PSMN3R5-80ES,127 - Nexperia
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PSMN3R5-80ES,127 | Nexperia | MOSFET N-CH 80V 120A I2PAK | 279 More on Order |
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Nexperia Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9800pF @ 30V FET Feature - Power Dissipation (Max) 338W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |