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PSMN3R8-30LL Datasheet

PSMN3R8-30LL,115 Cover
DatasheetPSMN3R8-30LL,115
File Size201.41 KB
Total Pages15
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PSMN3R8-30LL,115
Description MOSFET N-CH 30V QFN3333

PSMN3R8-30LL,115 - NXP

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URL Link

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2085pF @ 15V

FET Feature

-

Power Dissipation (Max)

69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN3333 (3.3x3.3)

Package / Case

8-VDFN Exposed Pad