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PSMN8R5-100ESFQ Datasheet

PSMN8R5-100ESFQ Cover
DatasheetPSMN8R5-100ESFQ
File Size250.01 KB
Total Pages13
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PSMN8R5-100ESFQ
Description MOSFET N-CHANNEL 100V 97A I2PAK

PSMN8R5-100ESFQ - Nexperia

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URL Link

PSMN8R5-100ESFQ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

97A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

44.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3181pF @ 50V

FET Feature

-

Power Dissipation (Max)

183W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-220-3, Short Tab