Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | PSMN8R5-100ESQ |
| File Size | 729.03 KB |
| Total Pages | 14 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PSMN8R5-100ESQ |
| Description | MOSFET N-CH 100V 100A I2PAK |
PSMN8R5-100ESQ - Nexperia
The Products You May Be Interested In
 |
PSMN8R5-100ESQ | Nexperia | MOSFET N-CH 100V 100A I2PAK | 8996 More on Order |
URL Link
www.zouser.com/datasheet/PSMN8R5-100ESQ
|
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tj) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5512pF @ 50V FET Feature - Power Dissipation (Max) 263W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |