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PUMD12/DG/B3 Datasheet

PUMD12/DG/B3,115 Cover
DatasheetPUMD12/DG/B3,115
File Size1,271.28 KB
Total Pages17
ManufacturerNexperia
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts PUMD12/DG/B3,115, PEMD12,315, PEMD12,115, PUMD12,115
Description TRANS RET SC-88, TRANS PREBIAS NPN/PNP SOT666, TRANS PREBIAS NPN/PNP SOT666, TRANS PREBIAS NPN/PNP 6TSSOP

PUMD12/DG/B3,115 - Nexperia

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The Products You May Be Interested In

PUMD12/DG/B3,115 PUMD12/DG/B3,115 Nexperia TRANS RET SC-88 504

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PEMD12,315 PEMD12,315 Nexperia TRANS PREBIAS NPN/PNP SOT666 504

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PEMD12,115 PEMD12,115 Nexperia TRANS PREBIAS NPN/PNP SOT666 233

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PUMD12,115 PUMD12,115 Nexperia TRANS PREBIAS NPN/PNP 6TSSOP 53303

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URL Link

PUMD12/DG/B3,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

230MHz, 180MHz

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

PEMD12,315

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

-

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-666

PEMD12,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

-

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-666

PUMD12,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

230MHz, 180MHz

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

6-TSSOP