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QH8MA2TCR Datasheet

QH8MA2TCR Cover
DatasheetQH8MA2TCR
File Size4,319.18 KB
Total Pages20
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts QH8MA2TCR
Description MOSFET N/P-CH 30V 4.5A/3A TSMT8

QH8MA2TCR - Rohm Semiconductor

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QH8MA2TCR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.5A, 3A

Rds On (Max) @ Id, Vgs

35mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

365pF @ 10V

Power - Max

1.25W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

TSMT8