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QJD1210010 Datasheet

QJD1210010 Cover
DatasheetQJD1210010
File Size509.97 KB
Total Pages7
ManufacturerPowerex Inc.
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts QJD1210010
Description MOSFET 2N-CH 1200V 100A SIC

QJD1210010 - Powerex Inc.

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QJD1210010

Powerex Inc.

Manufacturer

Powerex Inc.

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Rds On (Max) @ Id, Vgs

25mOhm @ 100A, 20V

Vgs(th) (Max) @ Id

5V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

500nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

10200pF @ 800V

Power - Max

1080W

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

Module