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| Datasheet | RJK2006DPE-00#J3 |
| File Size | 238.26 KB |
| Total Pages | 10 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RJK2006DPE-00#J3 |
| Description | MOSFET N-CH 200V 40A LDPAK |
RJK2006DPE-00#J3 - Renesas Electronics America
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RJK2006DPE-00#J3 | Renesas Electronics America | MOSFET N-CH 200V 40A LDPAK | 550 More on Order |
URL Link
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-LDPAK Package / Case SC-83 |