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| Datasheet | RJM0603JSC-00#12 |
| File Size | 150.42 KB |
| Total Pages | 12 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RJM0603JSC-00#12 |
| Description | MOSFET 3N/3P-CH 60V 20A HSOP |
RJM0603JSC-00#12 - Renesas Electronics America
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RJM0603JSC-00#12 | Renesas Electronics America | MOSFET 3N/3P-CH 60V 20A HSOP | 286 More on Order |
URL Link
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Manufacturer Renesas Electronics America Series Automotive, AEC-Q101 FET Type 3 N and 3 P-Channel (3-Phase Bridge) FET Feature Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 10V Power - Max 54W Operating Temperature 175°C Mounting Type Surface Mount Package / Case 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package 20-HSOP |