Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | RN1112ACT(TPL3) |
| File Size | 175.33 KB |
| Total Pages | 6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RN1112ACT(TPL3) |
| Description | TRANS PREBIAS NPN 0.1W CST3 |
RN1112ACT(TPL3) - Toshiba Semiconductor and Storage
The Products You May Be Interested In
 |
RN1112ACT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W CST3 | 403 More on Order |
URL Link
www.zouser.com/datasheet/RN1112ACT(TPL3)
|
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 80mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition - Power - Max 100mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |