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RT1A040ZPTR Datasheet

RT1A040ZPTR Cover
DatasheetRT1A040ZPTR
File Size218.51 KB
Total Pages6
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RT1A040ZPTR
Description MOSFET P-CH 12V 4A TSST8

RT1A040ZPTR - Rohm Semiconductor

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RT1A040ZPTR RT1A040ZPTR Rohm Semiconductor MOSFET P-CH 12V 4A TSST8 275

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RT1A040ZPTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

30mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

2350pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSST

Package / Case

8-SMD, Flat Lead