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RUE002N02TL Datasheet

RUE002N02TL Cover
DatasheetRUE002N02TL
File Size687.63 KB
Total Pages5
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts RUE002N02TL
Description MOSFET N-CH 20V .2A EMT3

RUE002N02TL - Rohm Semiconductor

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URL Link

RUE002N02TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 2.5V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 200mA, 2.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

EMT3

Package / Case

SC-75, SOT-416