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| Datasheet | RUS100N02TB |
| File Size | 2,640.6 KB |
| Total Pages | 12 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | RUS100N02TB |
| Description | MOSFET N-CH 20V 10A 8SOP |
RUS100N02TB - Rohm Semiconductor
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RUS100N02TB | Rohm Semiconductor | MOSFET N-CH 20V 10A 8SOP | 254 More on Order |
URL Link
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |