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| Datasheet | S12QR |
| File Size | 775.51 KB |
| Total Pages | 3 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 7 part numbers |
| Associated Parts | S12QR, S12Q, S12MR, S12M, S12KR, S12K, 1N1206A |
| Description | DIODE GEN PURP REV 1.2KV 12A DO4, DIODE GEN PURP 1200V 12A DO4, DIODE GEN PURP REV 1KV 12A DO4, DIODE GEN PURP 1000V 12A DO4, DIODE GEN PURP REV 800V 12A DO4 |
S12QR - GeneSiC Semiconductor
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Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.1V @ 12A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.1V @ 12A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.1V @ 12A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.1V @ 12A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.1V @ 12A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.1V @ 12A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.1V @ 12A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 200°C |