Datasheet | S1FLK-GS08 |
File Size | 89.66 KB |
Total Pages | 5 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 12 part numbers |
Associated Parts | S1FLK-GS08, S1FLK-GS18, S1FLG-GS08, S1FLJ-GS18, S1FLG-GS18, S1FLD-GS18, S1FLB-GS18, S1FLD-GS08, S1FLJ-GS08, S1FLB-GS08, S1FLM-GS08, S1FLM-GS18 |
Description | DIODE GP 800V 700MA DO219AB, DIODE GEN PURP 800V 1A DO219AB, DIODE GP 400V 700MA DO219AB, DIODE GEN PURP 600V 1A DO219AB, DIODE GP 400V 700MA DO219AB |
S1FLK-GS08 - Vishay Semiconductor Diodes Division
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S1FLK-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO219AB | 497 More on Order |
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S1FLG-GS08 | Vishay Semiconductor Diodes Division | DIODE GP 400V 700MA DO219AB | 555 More on Order |
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S1FLJ-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO219AB | 313 More on Order |
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S1FLG-GS18 | Vishay Semiconductor Diodes Division | DIODE GP 400V 700MA DO219AB | 174 More on Order |
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S1FLD-GS18 | Vishay Semiconductor Diodes Division | DIODE GP 200V 700MA DO219AB | 441 More on Order |
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S1FLB-GS18 | Vishay Semiconductor Diodes Division | DIODE GP 100V 700MA DO219AB | 346 More on Order |
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S1FLD-GS08 | Vishay Semiconductor Diodes Division | DIODE GP 200V 700MA DO219AB | 667 More on Order |
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S1FLJ-GS08 | Vishay Semiconductor Diodes Division | DIODE GP 600V 700MA DO219AB | 597 More on Order |
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S1FLB-GS08 | Vishay Semiconductor Diodes Division | DIODE GP 100V 700MA DO219AB | 3837 More on Order |
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S1FLM-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 700MA DO219AB | 97064 More on Order |
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S1FLM-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO219AB | 92003 More on Order |
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Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |