Datasheet | SCT50N120 |
File Size | 703.08 KB |
Total Pages | 11 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SCT50N120 |
Description | MOSFET N-CH 1.2KV TO247-3 |
SCT50N120 - STMicroelectronics
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SCT50N120 | STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | 1238 More on Order |
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STMicroelectronics Manufacturer STMicroelectronics Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 65A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 122nC @ 20V Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 400V FET Feature - Power Dissipation (Max) 318W (Tc) Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Supplier Device Package HiP247™ Package / Case TO-247-3 |