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SGL60N90DG3YDTU Datasheet

SGL60N90DG3YDTU Cover
DatasheetSGL60N90DG3YDTU
File Size363.93 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts SGL60N90DG3YDTU, SGL60N90DG3TU
Description IGBT 900V 60A 180W TO264, IGBT 900V 60A 180W TO264

SGL60N90DG3YDTU - ON Semiconductor

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URL Link

SGL60N90DG3YDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 60A

Power - Max

180W

Switching Energy

-

Input Type

Standard

Gate Charge

260nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.5µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264-3

SGL60N90DG3TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 60A

Power - Max

180W

Switching Energy

-

Input Type

Standard

Gate Charge

260nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.5µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264-3