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SI1016CX-T1-GE3 Datasheet

SI1016CX-T1-GE3 Cover
DatasheetSI1016CX-T1-GE3
File Size236.22 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1016CX-T1-GE3
Description MOSFET N/P-CH 20V SC89-6

SI1016CX-T1-GE3 - Vishay Siliconix

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URL Link

SI1016CX-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

396mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

43pF @ 10V

Power - Max

220mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SC-89-6