Datasheet | SI1023X-T1-E3 |
File Size | 140.72 KB |
Total Pages | 7 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI1023X-T1-E3, SI1023X-T1-GE3 |
Description | MOSFET 2P-CH 20V 0.37A SOT563F, MOSFET 2P-CH 20V 0.37A SC89-6 |
SI1023X-T1-E3 - Vishay Siliconix
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SI1023X-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 20V 0.37A SOT563F | 665 More on Order |
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SI1023X-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 0.37A SC89-6 | 4188 More on Order |
URL Link
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 370mA Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 370mA Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |