Top

SI1032R-T1-E3 Datasheet

SI1032R-T1-E3 Cover
DatasheetSI1032R-T1-E3
File Size131.72 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts SI1032R-T1-E3, SI1032X-T1-GE3, SI1032R-T1-GE3
Description MOSFET N-CH 20V 140MA SC-75A, MOSFET N-CH 20V 200MA SC89-3, MOSFET N-CH 20V 140MA SC-75A

SI1032R-T1-E3 - Vishay Siliconix

SI1032R-T1-E3 Datasheet Page 1
SI1032R-T1-E3 Datasheet Page 2
SI1032R-T1-E3 Datasheet Page 3
SI1032R-T1-E3 Datasheet Page 4
SI1032R-T1-E3 Datasheet Page 5
SI1032R-T1-E3 Datasheet Page 6
SI1032R-T1-E3 Datasheet Page 7

The Products You May Be Interested In

SI1032R-T1-E3 SI1032R-T1-E3 Vishay Siliconix MOSFET N-CH 20V 140MA SC-75A 262

More on Order

SI1032X-T1-GE3 SI1032X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 200MA SC89-3 3837

More on Order

SI1032R-T1-GE3 SI1032R-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 140MA SC-75A 114135

More on Order

URL Link

SI1032R-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

140mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A

SI1032X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-3

Package / Case

SC-89, SOT-490

SI1032R-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

140mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A