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| Datasheet | SI1035X-T1-E3 |
| File Size | 157.1 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI1035X-T1-E3, SI1035X-T1-GE3 |
| Description | MOSFET N/P-CH 20V SOT563F, MOSFET N/P-CH 20V SC-89 |
SI1035X-T1-E3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 180mA, 145mA Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id 400mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 180mA, 145mA Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id 400mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |