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SI1039X-T1-GE3 Datasheet

SI1039X-T1-GE3 Cover
DatasheetSI1039X-T1-GE3
File Size78.29 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1039X-T1-GE3, SI1039X-T1-E3
Description MOSFET P-CH 12V 0.87A SC89, MOSFET P-CH 12V 0.87A SOT563F

SI1039X-T1-GE3 - Vishay Siliconix

SI1039X-T1-GE3 Datasheet Page 1
SI1039X-T1-GE3 Datasheet Page 2
SI1039X-T1-GE3 Datasheet Page 3
SI1039X-T1-GE3 Datasheet Page 4
SI1039X-T1-GE3 Datasheet Page 5

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SI1039X-T1-GE3 SI1039X-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 0.87A SC89 344

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SI1039X-T1-E3 SI1039X-T1-E3 Vishay Siliconix MOSFET P-CH 12V 0.87A SOT563F 591

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URL Link

SI1039X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

870mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

165mOhm @ 870mA, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

170mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

SI1039X-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

870mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

165mOhm @ 870mA, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

170mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666