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| Datasheet | SI1300BDL-T1-GE3 |
| File Size | 110.43 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI1300BDL-T1-GE3, SI1300BDL-T1-E3 |
| Description | MOSFET N-CH 20V 400MA SC-70-3, MOSFET N-CH 20V 400MA SOT323-3 |
SI1300BDL-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 850mOhm @ 250mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.84nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 35pF @ 10V FET Feature - Power Dissipation (Max) 190mW (Ta), 200mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-3 Package / Case SC-70, SOT-323 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 850mOhm @ 250mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.84nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 35pF @ 10V FET Feature - Power Dissipation (Max) 190mW (Ta), 200mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-3 Package / Case SC-70, SOT-323 |