Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI1302DL-T1-GE3 |
| File Size | 217.34 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI1302DL-T1-GE3, SI1302DL-T1-E3 |
| Description | MOSFET N-CH 30V 600MA SC-70-3, MOSFET N-CH 30V 600MA SOT323-3 |
SI1302DL-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI1302DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 600MA SC-70-3 | 46776 More on Order |
 |
SI1302DL-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 600MA SOT323-3 | 126828 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 480mOhm @ 600mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 280mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-3 Package / Case SC-70, SOT-323 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 480mOhm @ 600mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 280mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-3 Package / Case SC-70, SOT-323 |