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SI1903DL-T1-GE3 Datasheet

SI1903DL-T1-GE3 Cover
DatasheetSI1903DL-T1-GE3
File Size106.33 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1903DL-T1-GE3, SI1903DL-T1-E3
Description MOSFET 2P-CH 20V 0.41A SC70-6, MOSFET 2P-CH 20V 0.41A SC70-6

SI1903DL-T1-GE3 - Vishay Siliconix

SI1903DL-T1-GE3 Datasheet Page 1
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SI1903DL-T1-GE3 Datasheet Page 5

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SI1903DL-T1-GE3 SI1903DL-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 0.41A SC70-6 612

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SI1903DL-T1-E3 SI1903DL-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 0.41A SC70-6 312

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URL Link

SI1903DL-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

410mA

Rds On (Max) @ Id, Vgs

995mOhm @ 410mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

270mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)

SI1903DL-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

410mA

Rds On (Max) @ Id, Vgs

995mOhm @ 410mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

270mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)