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| Datasheet | SI3429EDV-T1-GE3 |
| File Size | 244.95 KB |
| Total Pages | 11 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI3429EDV-T1-GE3 |
| Description | MOSFET P-CHAN 20V TSOP6S |
SI3429EDV-T1-GE3 - Vishay Siliconix
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URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 21mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 4085pF @ 50V FET Feature - Power Dissipation (Max) 4.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |